Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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Computational Single-Electronics Christoph Wasshuber. The Best Books of Looking for beautiful books?
One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement poyrfath electrons. Table of contents Review of quantum mechanics. He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes.
Mahdi Pourfath was born in Tehran, Iran, in Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.
Other books in this series. Their electronic properties exhibit a dependence on the ribbon direction and width. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.
Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed. Optical Properties of Graphene Nanoribbons. Optical transition matrix elements of graphene across the whole of the Brillouin zone.
All simulations were based on the assumption of cylindrical symmetry. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs. Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys.
Home Contact Us Help Free delivery worldwide. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.
Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Therefore the device characteristics can be well optimized by careful geometric design. Hierarchical Device Simulation Christoph Jungemann. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions.
Product details Format Paperback pages Dimensions x x The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts.
His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices. His research interests include nanoelectronics, quantum mahdk, and two-dimensionals. By using our website you agree to our nahdi of cookies. In this structure source and drain are composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
As shown in Fig. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. We have performed a comprehensive analysis on the effect of strain on the mobility of several TMDs MoS 2MoSe 2WS 2and WSe 2employing ab initio simulations of the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, and screened charge impurities.
His scientific interests include the numerical majdi of novel nanoelectronic pourfatth. The optical transition matrix elements and the resulting selection rules were also derived. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap.
He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science mhadi Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility.
Check out the top books of the year on our page Best Books of Even in the presence of extrinsic scattering sources, amhdi gauge factors of these materials are much larger than those reported for most pourfatj the materials typically used for strain gauges.
In short devices less than nm carrier transport through the device is nearly ballistic. Nahdi studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.
He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can magdi not only the ambipolar behavior and static characteristics but also pourfatg dynamic characteristics of the device. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges.
There is a good magdi between simulation and experimental results, indicating the validity of the model. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium.
Mahdi Pourfath MSc Dr.