IRG4PC50UD-EPBF Infineon Technologies IGBT Transistors V UltraFast 8- 60kHz datasheet, inventory, & pricing. IRG4PC50UD Transistor Datasheet, IRG4PC50UD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog. IRG4PC50UD datasheet, IRG4PC50UD circuit, IRG4PC50UD data sheet: IRF – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT.

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Tu rn -on lo sses inclu de. Generation 4 IGBT design provides tighter. Total Gate Charge turn-on.

Gate – Emitter Charge turn-on. IGBT’s optimized for specific application conditions.

IRG4PC50UD IGBT. Datasheet pdf. Equivalent

Minimized recovery characteristics require. Q gTotal Gate Charge nC. Diode Maximum Forward Current. Clamped Inductive Load Current R. V CE on typ. Visit us at www.

Optimized for high operating. D im en sion s in M illim eters a nd Inches. Du ty c ycle: Diode Peak Reverse Recovery Current. Pulsed Collector Current Q. Datawheet 5mm from package.


Case-to-Sink, flat, greased surface. Gate – Collector Charge turn-on. Q gTotal Gate Charge nC.

IRG4PC50UD Datasheet(PDF) – International Rectifier

Pulsed Collector Current Q. Clamped Inductive Load Test.

Zero Gate Voltage Collector Current. Data and specifications subject to change without notice. Du ty c ycle: Visit us at www. Diode Reverse Recovery Time. Diode Maximum Forward Current. Gate – Daasheet Charge turn-on.

Macro Waveforms for Figure 18a’s Test Circuit. C unless otherwise specified. Ga te d rive a s spe cified. T Pulse width 5. Ga te d rive a s spe cified. Industry standard TOAC package.